Aluvia’s Aluminum Oxide Photonics Platform
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Broadband
Aluvia’s platform offers an unparalleled spectral range from 200 nm to the mid-IR (~3 µm), covering UV, visible, and infrared applications. It is the first integrated photonics platform to enable efficient UV transmission, opening new possibilities for advanced optical systems.
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Low Propagation Loss
The platform achieves ultra-low propagation losses, as low as ~1 dB/cm at 369 nm and ~5 dB/m at 1550 nm. This ensures exceptional signal clarity and performance across critical wavelengths for photonics applications.
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Optical Amplification
Aluvia supports optical amplification through rare-earth ion doping for specific bands. This includes Er3+ for C- and L-bands, Yb3+ and Nd3+ for the 1 µm band, and Tm3+ for the 1.8–2 µm range, enabling integrated light sources for various applications.
Optical Communications
Aluvia is driving innovation in Erbium-Doped Waveguide Amplifiers (EDWAs), advancing their integration into photonic systems where traditional fiber amplifiers fall short. Leveraging cutting-edge developments in Al₂O₃:Er³⁺ platforms, Aluvia has demonstrated record-breaking performance. By integrating EDWAs directly onto photonic wafers with advanced doping techniques, wafer-level scalability, and custom pump laser solutions, Aluvia is pioneering a transformative technology poised to reshape photonic integration and unlock new frontiers in optical amplification.
A PIC-EDWA evaluation kit is now available at Aluvia Photonics.
Quantum Technologies
Al₂O₃:Er³⁺ platform enables a wide variety of quantum information processing technologies such as quantum sensing, quantum communication, and quantum computing. Our PICs can be used either for manipulating quantum states using photonics, like in ion or neutral atom trapping on a PIC, or to directly generate and route photonic quantum states on-chip. Since the material is transparent down to the UV, beam delivery for relevant wavelengths for neutral atoms and ions can be achieved on our PICs. Furthermore, the low loss of Al₂O₃ allows controlling and guiding single photons on-chip with low optical loss. Finally, the high optical gain of rare-earth ion doped Al₂O₃:Er³⁺ enables high optical powers on-chip to drive specific non-linear optical processes.
Integrated Lasers
Aluvia’s Al₂O₃ technology has enabled a breakthrough in chip-integrated laser development, particularly for the near UV spectrum. The first extended cavity diode laser at 405 nm was realized using Al₂O₃, leveraging its exceptional optical properties and compatibility with GaN amplifiers. This design incorporates a GaN amplifier coupled with an Al₂O₃ PIC featuring integrated Vernier feedback circuits. The result is a highly efficient and compact laser system, offering precise wavelength control and stability. This advancement highlights Aluvia’s potential to redefine compact laser solutions for UV-sensitive applications, including spectroscopy, biotechnology, and advanced manufacturing.
Our Offering
Get ahead of the curve - integrate Aluvia’s PICs into your photonics solutions today!